CGD65B130SH2

CGD65B130SH2

650V GaN transistor

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Product Description

The CGD65B130SH2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. As an authorised distributor, Supreme Components International offers this 650V, 130mOhm enhancement mode GaN transistor designed for high-efficiency applications. Encased in a small DFN8x8 package, this GaN MOSFET provides exceptional power density and switching characteristics. Its superior performance makes it suitable for a wide range of applications, including AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Benefit from reduced switching losses, improved thermal management, and increased system efficiency with this state-of-the-art GaN transistor. Choose the CGD65B130SH2 for your next power design and experience the advantages of GaN technology.

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Technical Specifications

Technology Gallium Nitride
Gate charge 11 nC
Package type DFN8x8
Voltage rating 650 Volts
Input capacitance 500 pF
Total gate charge 11 nC
Output capacitance 40 pF
Drain source on resistance 130 mOhm
Operating temperature range -55 Degrees Celsius to +150 Degrees Celsius
Ships in: 1 day

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