
The CGD65B200S2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This enhancement mode GaN transistor boasts a voltage rating of 650V and a low on-resistance of 200mOhm, enabling efficient power conversion. As an authorised distributor, Supreme Components International ensures you receive genuine, high-quality components. GaN MOSFETs offer superior switching performance, reduced power losses, and higher power density compared to silicon-based alternatives. This device is well-suited for applications such as AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Its fast switching capabilities minimize switching losses, leading to improved overall system efficiency and reduced heat dissipation. Explore the potential of GaN technology with the CGD65B200S2 and unlock new possibilities in power electronics design.
Product Categories
Specifications
Parameter | Value |
---|---|
Gatecharge | 11 nC |
Technology | Gallium Nitride |
Packagetype | DFN8x8 |
Voltagerating | 650 Volts |
Maximumdraincurrent | 14 Amperes |
Gatethresholdvoltage | 1.6 Volts |
Drainsourceonresistance | 200 mOhm |
Operatingtemperaturerange | -55 Degrees Celsius to +150 Degrees Celsius |
Ordering Information
Parameter | Value |
---|---|
Packaging Type | TRAY |