CGD65B200S2

650V, 200mOhm, Enhancement mode GaN transistor

The CGD65B200S2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This enhancement mode GaN transistor boasts a voltage rating of 650V and a low on-resistance of 200mOhm, enabling efficient power conversion. As an authorised distributor, Supreme Components International ensures you receive genuine, high-quality components. GaN MOSFETs offer superior switching performance, reduced power losses, and higher power density compared to silicon-based alternatives. This device is well-suited for applications such as AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Its fast switching capabilities minimize switching losses, leading to improved overall system efficiency and reduced heat dissipation. Explore the potential of GaN technology with the CGD65B200S2 and unlock new possibilities in power electronics design.

Product Categories

GaN transistors

Specifications

Parameter Value
Gatecharge 11 nC
Technology Gallium Nitride
Packagetype DFN8x8
Voltagerating 650 Volts
Maximumdraincurrent 14 Amperes
Gatethresholdvoltage 1.6 Volts
Drainsourceonresistance 200 mOhm
Operatingtemperaturerange -55 Degrees Celsius to +150 Degrees Celsius

Ordering Information

Parameter Value
Packaging Type TRAY

Datasheet

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