CGD65C025SP2

650V, 25mOhm Enhancement mode GaN transistor in DFN8x8 package

The CGD65C025SP2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. As an authorised distributor, Supreme Components International offers this 650V, 25mOhm enhancement mode GaN transistor, designed for high-efficiency power conversion. Housed in a compact DFN8x8 package, this GaN MOSFET delivers exceptional performance with fast switching speeds and reduced on-resistance. This device is perfect for applications such as power supplies, inverters, and motor drives where efficiency and power density are critical. Benefit from the superior characteristics of GaN technology, including lower switching losses and improved thermal performance. Choose the CGD65C025SP2 for your next-generation power design.

Product Categories

GaN transistors

Specifications

Parameter Value
Gatecharge 14 nC
Technology Gallium Nitride
Packagetype DFN8x8
Voltagerating 650V
Totalgatecharge 7.5 nC
Drainsourceonresistance 25 mOhm
Operatingtemperaturerange -55°C to +150°C

Datasheet

Download Datasheet

Contact Us for Design-in or Quote Support Today

This is a staging environment
×