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CGD65A130SH2
Manufacturer Cambridge GaN Devices
Short Description 650V, 130mOhm GaN transistor
Datasheet đź“„ Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Identifier
20A
Technology
Gallium Nitride
Gate Charge
11 nanoCoulombs
Package Type
DFN8x8
Voltage Rating
650 Volts
Total Gate Charge
11 nanoCoulombs
Total Power Dissipation
69 Watts
Drain Source On Resistance
130 milliOhms
Operating Temperature Range
Negative 55 to 150 degrees Celsius

Ordering Information

Parameter
Value
Packaging Type
TAPE_AND_REEL

Full Description

The CGD65A130SH2, manufactured by Cambridge GaN Devices, represents a significant advancement in power transistor technology. As an authorised distributor, Supreme Components International offers this high-performance 650V GaN MOSFET. Featuring a low on-resistance of 130mOhm, this enhancement mode transistor minimizes conduction losses, leading to improved efficiency. Its GaN-based design enables faster switching speeds and reduced switching losses compared to traditional silicon MOSFETs. The compact DFN8x8 package allows for high power density and efficient thermal management. This device is well-suited for applications such as power supplies, inverters, and motor drives where efficiency and power density are critical. Benefit from the superior performance and reliability of GaN technology with the CGD65A130SH2.

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