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SKM1200GB17R8S2T6

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Chip Technology: IGBT R8; Current (A): 1200 A; Dimensions (LLxBBxHH) mm: 140x100x38; Features: Open standard module platform, Low losses and high power density, Low inductance design, Ideal for paralleling and scaling, Highest reliabilitySintered chipsAlCu bond wiresAlSiC baseplate; Housing: SEMITRANS 20; Part Number: 22300130; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM1200GB17R8S2T6; Switches: Half-Bridge; Technology: IGBT; Voltage (V): 1700 V; Product Line: SEMITRANS; Product Description: SEMITRANS 20

SKU: SKM1200GB17R8S2T6 Categories: , Tag:

Description

Chip Technology: IGBT R8; Current (A): 1200 A; Dimensions (LLxBBxHH) mm: 140x100x38; Features: Open standard module platform, Low losses and high power density, Low inductance design, Ideal for paralleling and scaling, Highest reliabilitySintered chipsAlCu bond wiresAlSiC baseplate; Housing: SEMITRANS 20; Part Number: 22300130; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM1200GB17R8S2T6; Switches: Half-Bridge; Technology: IGBT; Voltage (V): 1700 V; Product Line: SEMITRANS; Product Description: SEMITRANS 20

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