
SEMiX903GAL17E7pV1
$0.00
Chip Technology: IGBT T7; Current (A): 900 A; Dimensions (LLxBBxHH) mm: 150x62x17; Features: Homogeneous Si, Trench = Trenchgate technology, VCE(sat) with positive temperature coefficient, High short circuit capability, Press-fit pins as auxiliary contacts, UL recognized, file no. E63532; Housing: SEMiX 3p; Part Number: 27895572; Product Line: SEMiX; Product Status: In production new; Product Type: SEMiX903GAL17E7pV1; Switches: Chopper/Booster; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Renewable energy systems; Voltage (V): 1700 V; Product Line: SEMiX; Product Description: SEMiX 3p
Description
Chip Technology: IGBT T7; Current (A): 900 A; Dimensions (LLxBBxHH) mm: 150x62x17; Features: Homogeneous Si, Trench = Trenchgate technology, VCE(sat) with positive temperature coefficient, High short circuit capability, Press-fit pins as auxiliary contacts, UL recognized, file no. E63532; Housing: SEMiX 3p; Part Number: 27895572; Product Line: SEMiX; Product Status: In production new; Product Type: SEMiX903GAL17E7pV1; Switches: Chopper/Booster; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Renewable energy systems; Voltage (V): 1700 V; Product Line: SEMiX; Product Description: SEMiX 3p