SKM600GM12E4D1
$0.00
Chip Technology: IGBT 4 (Trench); Current (A): 600 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: IGBT4 = 4th generation medium fast trench IGBT (Infineon), CAL4HD = 4th generation high density (HD) CAL-diode optimized for low static losses, Insulated copper baseplate using DBC technology (Direct Bonded Copper), Increased power cycling capability, With integrated gate resistor, For higher switching frequencies up to 6kHz, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 22892150; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM600GM12E4D1; Switches: AC Switch; Technology: IGBT; Typical Applications: Matrix Inverter, Bidirectional switch; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Description
Chip Technology: IGBT 4 (Trench); Current (A): 600 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: IGBT4 = 4th generation medium fast trench IGBT (Infineon), CAL4HD = 4th generation high density (HD) CAL-diode optimized for low static losses, Insulated copper baseplate using DBC technology (Direct Bonded Copper), Increased power cycling capability, With integrated gate resistor, For higher switching frequencies up to 6kHz, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 22892150; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM600GM12E4D1; Switches: AC Switch; Technology: IGBT; Typical Applications: Matrix Inverter, Bidirectional switch; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3