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SKM350MB120SCH15
Chip Technology: Gen 2 SiC MOSFET (RM); Current (A): 478 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: Full Silicon Carbide (SiC) power module, High reliability 2nd Generation SiC MOSFETs, Optimized for fast switching and lowest power losses, High humidity robustness (HV-H3TRB proof), Insulated copper baseplate using DBC technology (Direct Bonded Copper), Improved thermal performances with Aluminium Nitride (AlN) substrate, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 21920190; Product Line: SEMITRANS; Product Status: Not for new designs; Product Type: SKM350MB120SCH15; Switches: Half-Bridge; Technology: SiC MOSFET; Typical Applications: High frequency power supplies, AC inverters, Traction APU, EV Chargers, Industrial Test Systems; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Product Description
Chip Technology: Gen 2 SiC MOSFET (RM); Current (A): 478 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: Full Silicon Carbide (SiC) power module, High reliability 2nd Generation SiC MOSFETs, Optimized for fast switching and lowest power losses, High humidity robustness (HV-H3TRB proof), Insulated copper baseplate using DBC technology (Direct Bonded Copper), Improved thermal performances with Aluminium Nitride (AlN) substrate, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 21920190; Product Line: SEMITRANS; Product Status: Not for new designs; Product Type: SKM350MB120SCH15; Switches: Half-Bridge; Technology: SiC MOSFET; Typical Applications: High frequency power supplies, AC inverters, Traction APU, EV Chargers, Industrial Test Systems; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3