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SKM260MB170SCH17
Chip Technology: Gen 2 SiC MOSFET (RM); Current (A): 378 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: Full Silicon Carbide (SiC) power module, High reliability 2nd Generation SiC MOSFETs, Optimized for fast switching and lowest power losses, External SiC Schottky Barrier Diode embedded, Insulated copper baseplate using DBC technology (Direct Bonded Copper), Improved thermal performances with Aluminum Nitride (AlN) substrate, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 21920680; Product Line: SEMITRANS; Product Status: Not for new designs; Product Type: SKM260MB170SCH17; Switches: Half-Bridge; Technology: SiC MOSFET; Typical Applications: High frequency power supplies, AC inverters, Traction APU, EV Chargers, Industrial Test Systems; Voltage (V): 1700 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Product Description
Chip Technology: Gen 2 SiC MOSFET (RM); Current (A): 378 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: Full Silicon Carbide (SiC) power module, High reliability 2nd Generation SiC MOSFETs, Optimized for fast switching and lowest power losses, External SiC Schottky Barrier Diode embedded, Insulated copper baseplate using DBC technology (Direct Bonded Copper), Improved thermal performances with Aluminum Nitride (AlN) substrate, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 21920680; Product Line: SEMITRANS; Product Status: Not for new designs; Product Type: SKM260MB170SCH17; Switches: Half-Bridge; Technology: SiC MOSFET; Typical Applications: High frequency power supplies, AC inverters, Traction APU, EV Chargers, Industrial Test Systems; Voltage (V): 1700 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3