Reference Only
SKM200GB12T4SiC2
Chip Technology: SiC Diode + IGBT 4 (Trench); Current (A): 200 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: IGBT4 = 4. Generation Fast Trench IGBT (Infineon), With Silicon Carbide Schottky diodes (ROHM), Insulated copper baseplate using DBC Technology (Direct Bonded Copper), UL recognized, file no. E63532, Increased power cycling capability, With integrated gate resistor, For higher switching frequencies; Housing: SEMITRANS 3; Part Number: 22892220; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM200GB12T4SiC2; Switches: Half-Bridge; Technology: Hybrid SiC; Typical Applications: AC inverter drives, UPS, Electronic welders, DC/DC converters; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Product Description
Chip Technology: SiC Diode + IGBT 4 (Trench); Current (A): 200 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: IGBT4 = 4. Generation Fast Trench IGBT (Infineon), With Silicon Carbide Schottky diodes (ROHM), Insulated copper baseplate using DBC Technology (Direct Bonded Copper), UL recognized, file no. E63532, Increased power cycling capability, With integrated gate resistor, For higher switching frequencies; Housing: SEMITRANS 3; Part Number: 22892220; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM200GB12T4SiC2; Switches: Half-Bridge; Technology: Hybrid SiC; Typical Applications: AC inverter drives, UPS, Electronic welders, DC/DC converters; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3