Reference Only
SKM200GB12F4SiC3
Chip Technology: SiC Diode + IGBT 4 fast (Trench); Current (A): 200 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: IGBT4 = 4. Generation Fast Trench (High Speed) IGBT (Infineon), With Silicon Carbide Schottky diodes (ROHM), Insulated copper baseplate using DBC Technology (Direct Bonded Copper), UL recognized, file no. E63532, With integrated gate resistor, For higher switching frequencies; Housing: SEMITRANS 3; Part Number: 22896110; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM200GB12F4SiC3; Switches: Half-Bridge; Technology: Hybrid SiC; Typical Applications: AC inverter drives, UPS, Electronic welders, DC/DC converters; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Product Description
Chip Technology: SiC Diode + IGBT 4 fast (Trench); Current (A): 200 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: IGBT4 = 4. Generation Fast Trench (High Speed) IGBT (Infineon), With Silicon Carbide Schottky diodes (ROHM), Insulated copper baseplate using DBC Technology (Direct Bonded Copper), UL recognized, file no. E63532, With integrated gate resistor, For higher switching frequencies; Housing: SEMITRANS 3; Part Number: 22896110; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM200GB12F4SiC3; Switches: Half-Bridge; Technology: Hybrid SiC; Typical Applications: AC inverter drives, UPS, Electronic welders, DC/DC converters; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3