Reference Only
SKM125KD12SC
Chip Technology: SiC Schottky Diode; Current (A): 264 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: Full Silicon Carbide (SiC) power module, 1200V SiC Schottky FWDs, High frequency rectifier, Improved thermal performances with Aluminium Nitride (AlN) substrate, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 21921830; Product Line: SEMITRANS; Product Status: In production; Product Type: SKM125KD12SC; Switches: Rectifier; Technology: SiC MOSFET; Typical Applications: Rectifiers for DC/DC converters, High frequency rectifier applications; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Product Description
Chip Technology: SiC Schottky Diode; Current (A): 264 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: Full Silicon Carbide (SiC) power module, 1200V SiC Schottky FWDs, High frequency rectifier, Improved thermal performances with Aluminium Nitride (AlN) substrate, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 21921830; Product Line: SEMITRANS; Product Status: In production; Product Type: SKM125KD12SC; Switches: Rectifier; Technology: SiC MOSFET; Typical Applications: Rectifiers for DC/DC converters, High frequency rectifier applications; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3