SKM100GB125DN
$0.00
Chip Technology: NPT IGBT (Ultrafast); Current (A): 75 A; Dimensions (LLxBBxHH) mm: 95x35x31; Features: N channel, homogeneous Si, Low inductance case, Short tail current with low temperature dependence, High short circuit capability, self limiting to 6 x Icnom, Fast & soft inverse CAL diodes, Isolated copper baseplate using DCB Direct Copper Bonding Technology, Large clearance (10 mm) and creepage distances (20 mm); Housing: SEMITRANS 2N; Part Number: 21915390; Product Line: SEMITRANS; Product Status: Not for new designs; Product Type: SKM100GB125DN; Switches: Half-Bridge; Technology: IGBT; Typical Applications: Switched mode power supplies at fsw > 20 kHz, Resonant inverters up to 100 kHz, Inductive heating, Electronic welders at fsw > 20 kHz; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 2N
Description
Chip Technology: NPT IGBT (Ultrafast); Current (A): 75 A; Dimensions (LLxBBxHH) mm: 95x35x31; Features: N channel, homogeneous Si, Low inductance case, Short tail current with low temperature dependence, High short circuit capability, self limiting to 6 x Icnom, Fast & soft inverse CAL diodes, Isolated copper baseplate using DCB Direct Copper Bonding Technology, Large clearance (10 mm) and creepage distances (20 mm); Housing: SEMITRANS 2N; Part Number: 21915390; Product Line: SEMITRANS; Product Status: Not for new designs; Product Type: SKM100GB125DN; Switches: Half-Bridge; Technology: IGBT; Typical Applications: Switched mode power supplies at fsw > 20 kHz, Resonant inverters up to 100 kHz, Inductive heating, Electronic welders at fsw > 20 kHz; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 2N