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SKiM459GD12F4V4
Chip Technology: SiC Diode + IGBT 4 fast (Trench); Current (A): 450 A; Dimensions (LLxBBxHH) mm: 160x150x35; Features: IGBT 4 Fast, SiC Schottky free-wheeling diodes, 6 diodes per switch, Solderless sinter technology, VCE(sat) with positive temperature coefficient, Low inductance case, Insulated by Al2O3 DBC (Direct Bonded Copper) ceramic substrate, Pressure contact technology for thermal contacts, Spring contact system to attach driver PCB to the control terminals, High short circuit capability, Integrated temperature sensor, UL recognized: File no. E63532; Housing: SKiM 93; Part Number: 23930320; Product Line: SKiM 93; Product Status: In production new; Product Type: SKiM459GD12F4V4; Switches: Sixpack; Technology: Hybrid SiC; Typical Applications: UPS (inv., rect.), Energy storage, Active front-end; Voltage (V): 1200 V; Product Line: SKiM; Product Description: SKiM 93
Product Description
Chip Technology: SiC Diode + IGBT 4 fast (Trench); Current (A): 450 A; Dimensions (LLxBBxHH) mm: 160x150x35; Features: IGBT 4 Fast, SiC Schottky free-wheeling diodes, 6 diodes per switch, Solderless sinter technology, VCE(sat) with positive temperature coefficient, Low inductance case, Insulated by Al2O3 DBC (Direct Bonded Copper) ceramic substrate, Pressure contact technology for thermal contacts, Spring contact system to attach driver PCB to the control terminals, High short circuit capability, Integrated temperature sensor, UL recognized: File no. E63532; Housing: SKiM 93; Part Number: 23930320; Product Line: SKiM 93; Product Status: In production new; Product Type: SKiM459GD12F4V4; Switches: Sixpack; Technology: Hybrid SiC; Typical Applications: UPS (inv., rect.), Energy storage, Active front-end; Voltage (V): 1200 V; Product Line: SKiM; Product Description: SKiM 93