Reference Only
SK80MB120CR03TE1
Chip Technology: Gen 3 SiC MOSFET (WS); Current (A): 100 A; Dimensions (LLxBBxHH) mm: 63x34x12; Features: Optimized design for superior thermal performance, Very low inductance design, Press-Fit contact technology, 1200V Planar Gen3 SiC MOSFET, Simple to drive with +15V gate voltage, Optimized switching stability thanks to module integrated gate resistors, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E1; Part Number: 24922530; Product Line: SEMITOP; Product Status: In production new; Product Type: SK80MB120CR03TE1; Switches: Half-Bridge; Technology: SiC MOSFET; Typical Applications: Switched Mode Power Supplies, Energy Storage Systems, Electric Vehicle charging, UPS, Solar, Motor Drives; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E1
Product Description
Chip Technology: Gen 3 SiC MOSFET (WS); Current (A): 100 A; Dimensions (LLxBBxHH) mm: 63x34x12; Features: Optimized design for superior thermal performance, Very low inductance design, Press-Fit contact technology, 1200V Planar Gen3 SiC MOSFET, Simple to drive with +15V gate voltage, Optimized switching stability thanks to module integrated gate resistors, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E1; Part Number: 24922530; Product Line: SEMITOP; Product Status: In production new; Product Type: SK80MB120CR03TE1; Switches: Half-Bridge; Technology: SiC MOSFET; Typical Applications: Switched Mode Power Supplies, Energy Storage Systems, Electric Vehicle charging, UPS, Solar, Motor Drives; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E1