Reference Only
SK40MLLE120CR03TE1
Chip Technology: Gen 3 SiC MOSFET (WS); Current (A): 43 A; Dimensions (LLxBBxHH) mm: 63x34x12; Features: Optimized design for superior thermal performance, Extremely low inductance design, Press-Fit contact technology, 1200V Planar Gen3 SiC MOS, Simple to drive with +15V gate voltage, SiC Schottky diode, New PEP diode technology for enhanced power and environmental robustness, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E1; Part Number: 24923170; Product Line: SEMITOP; Product Status: In production new; Product Type: SK40MLLE120CR03TE1; Switches: Chopper/Booster; Technology: SiC MOSFET; Typical Applications: Solar; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E1
Product Description
Chip Technology: Gen 3 SiC MOSFET (WS); Current (A): 43 A; Dimensions (LLxBBxHH) mm: 63x34x12; Features: Optimized design for superior thermal performance, Extremely low inductance design, Press-Fit contact technology, 1200V Planar Gen3 SiC MOS, Simple to drive with +15V gate voltage, SiC Schottky diode, New PEP diode technology for enhanced power and environmental robustness, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E1; Part Number: 24923170; Product Line: SEMITOP; Product Status: In production new; Product Type: SK40MLLE120CR03TE1; Switches: Chopper/Booster; Technology: SiC MOSFET; Typical Applications: Solar; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E1