Reference Only
SK30DMD120RM04ETE2
Chip Technology: Gen 4 SiC MOSFET (RM); Current (A): 29 A; Dimensions (LLxBBxHH) mm: 63x57x12; Features: Optimized design for superior thermal performance, Low inductance design, Press-Fit contact technology, 1200V Trench Gen4 SiC MOSFET, PEP rectifier diode technology for enhanced power and environmental robustness, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E2; Part Number: 24923430; Product Line: SEMITOP; Product Status: In production new; Product Type: SK30DMD120RM04ETE2; Switches: CI; Technology: SiC MOSFET; Typical Applications: Motor drives, Servo drives, HVAC, Air conditioning, Heat pumps, Auxiliary converters, UPS; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E2
Product Description
Chip Technology: Gen 4 SiC MOSFET (RM); Current (A): 29 A; Dimensions (LLxBBxHH) mm: 63x57x12; Features: Optimized design for superior thermal performance, Low inductance design, Press-Fit contact technology, 1200V Trench Gen4 SiC MOSFET, PEP rectifier diode technology for enhanced power and environmental robustness, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E2; Part Number: 24923430; Product Line: SEMITOP; Product Status: In production new; Product Type: SK30DMD120RM04ETE2; Switches: CI; Technology: SiC MOSFET; Typical Applications: Motor drives, Servo drives, HVAC, Air conditioning, Heat pumps, Auxiliary converters, UPS; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E2