Reference Only
SK100MH120RM04ETE1
Chip Technology: Gen 4 SiC MOSFET (RM); Current (A): 89 A; Dimensions (LLxBBxHH) mm: 63x34x12; Features: Optimized design for superior thermal performance, Low inductance design, Press-Fit contact technology, 1200V Trench Gen4 SiC MOSFET, Unipolar gate control, Optimized switching stability thanks to module integrated gate resistors, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E1; Part Number: 24923530; Product Line: SEMITOP; Product Status: Sample status; Product Type: SK100MH120RM04ETE1; Switches: H-Bridge; Technology: SiC MOSFET; Typical Applications: Electric Vehicle charging, Energy Storage Systems, Solar, UPS; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E1
Product Description
Chip Technology: Gen 4 SiC MOSFET (RM); Current (A): 89 A; Dimensions (LLxBBxHH) mm: 63x34x12; Features: Optimized design for superior thermal performance, Low inductance design, Press-Fit contact technology, 1200V Trench Gen4 SiC MOSFET, Unipolar gate control, Optimized switching stability thanks to module integrated gate resistors, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E1; Part Number: 24923530; Product Line: SEMITOP; Product Status: Sample status; Product Type: SK100MH120RM04ETE1; Switches: H-Bridge; Technology: SiC MOSFET; Typical Applications: Electric Vehicle charging, Energy Storage Systems, Solar, UPS; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E1