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SEMiX603GB12E4Ip

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Chip Technology: IGBT 4 (Trench); Current (A): 600 A; Dimensions (LLxBBxHH) mm: 150x62x17; Features: Homogeneous Si, Trench = Trenchgate technology, VCE(sat) with positive temperature coefficient, High short circuit capability, Press-fit pins as auxiliary contacts, Thermally optimized ceramic, Current sensing shunt resistor, UL recognized, file no. E63532; Housing: SEMiX 3p shunt; Part Number: 27897000; Product Line: SEMiX; Product Status: In production; Product Type: SEMiX603GB12E4Ip; Switches: Half-Bridge; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Renewable energy systems; Voltage (V): 1200 V; Product Line: SEMiX; Product Description: SEMiX 3p shunt

SKU: SEMiX603GB12E4Ip Categories: , Tag:

Description

Chip Technology: IGBT 4 (Trench); Current (A): 600 A; Dimensions (LLxBBxHH) mm: 150x62x17; Features: Homogeneous Si, Trench = Trenchgate technology, VCE(sat) with positive temperature coefficient, High short circuit capability, Press-fit pins as auxiliary contacts, Thermally optimized ceramic, Current sensing shunt resistor, UL recognized, file no. E63532; Housing: SEMiX 3p shunt; Part Number: 27897000; Product Line: SEMiX; Product Status: In production; Product Type: SEMiX603GB12E4Ip; Switches: Half-Bridge; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Renewable energy systems; Voltage (V): 1200 V; Product Line: SEMiX; Product Description: SEMiX 3p shunt

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