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SEMiX205BT07F3SC4
Chip Technology: SiC Diode + IGBT 3 (Trench); Current (A): 200 A; Dimensions (LLxBBxHH) mm: 130x70x17; Features: Solderless assembling solution with PressFIT signal pins and screw power terminals, IGBT 3 High Speed Trench Technology, Silicon Carbide (SiC) Free-wheeling Schottky diodes : Diode 1 (D1…D4), Silicon anti-parallel diodes , Diode 2 (D5…D8), VCE(sat) with positive temperature coefficient, Low inductance case, Reliable mechanical design with injection moulded terminals and reliable internal connections, UL recognized file no. E63532, NTC temperature sensor inside; Housing: SEMiX 5p; Part Number: 27922500; Product Line: SEMiX; Product Status: In production new; Product Type: SEMiX205BT07F3SC4; Switches: 3-Level; Technology: Hybrid SiC; Typical Applications: High Frequency Resonant Converter, Interleaved Active Rectifier, UPS; Voltage (V): 650 V; Product Line: SEMiX; Product Description: SEMiX 5p
Product Description
Chip Technology: SiC Diode + IGBT 3 (Trench); Current (A): 200 A; Dimensions (LLxBBxHH) mm: 130x70x17; Features: Solderless assembling solution with PressFIT signal pins and screw power terminals, IGBT 3 High Speed Trench Technology, Silicon Carbide (SiC) Free-wheeling Schottky diodes : Diode 1 (D1…D4), Silicon anti-parallel diodes , Diode 2 (D5…D8), VCE(sat) with positive temperature coefficient, Low inductance case, Reliable mechanical design with injection moulded terminals and reliable internal connections, UL recognized file no. E63532, NTC temperature sensor inside; Housing: SEMiX 5p; Part Number: 27922500; Product Line: SEMiX; Product Status: In production new; Product Type: SEMiX205BT07F3SC4; Switches: 3-Level; Technology: Hybrid SiC; Typical Applications: High Frequency Resonant Converter, Interleaved Active Rectifier, UPS; Voltage (V): 650 V; Product Line: SEMiX; Product Description: SEMiX 5p