Reference Only
FMUN4N80-H
Package: TO-252; Type: N MOS; BVDSS (V): 800; ID (A): 4; PD (W): 35; IDSS @VDSS(V): 800; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.4m; RDSON1 Max.(Ω): 3.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 2; Ciss Typ.(pF): 496; Qg Typ.(nC): 23.5; AEC-Q101 Qualified: No
Product Description
Package: TO-252; Type: N MOS; BVDSS (V): 800; ID (A): 4; PD (W): 35; IDSS @VDSS(V): 800; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.4m; RDSON1 Max.(Ω): 3.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 2; Ciss Typ.(pF): 496; Qg Typ.(nC): 23.5; AEC-Q101 Qualified: No