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FMUN2N120-H

FMUN2N120-H

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FMUN2N120-H

Package: TO-252; Type: N MOS; BVDSS (V): 1200; ID (A): 2; PD (W): 75; EAS (mJ): 465; IDSS @VDSS(V): 1200; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 3; VGS(th) Max.(V): 5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.75; RDSON1 Max.(Ω): 7.5; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 1; Ciss Typ.(pF): 700; Qg Typ.(nC): 31; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-252; Type: N MOS; BVDSS (V): 1200; ID (A): 2; PD (W): 75; EAS (mJ): 465; IDSS @VDSS(V): 1200; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 3; VGS(th) Max.(V): 5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.75; RDSON1 Max.(Ω): 7.5; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 1; Ciss Typ.(pF): 700; Qg Typ.(nC): 31; AEC-Q101 Qualified: No

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