Reference Only
FMOSV007DN02-H
Package: SOT-563; Type: Dual N MOS; BVDSS (V): 20; ID (A): 0.7; PD (W): 0.15; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.45; VGS(th) Max.(V): 1.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 190m; RDSON1 Max.(Ω): 230m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.55; RDSON2 Typ.(Ω): 234m; RDSON2 Max.(Ω): 305m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 0.45; Ciss Typ.(pF): 43; Qg Typ.(nC): 2; AEC-Q101 Qualified: No
Product Description
Package: SOT-563; Type: Dual N MOS; BVDSS (V): 20; ID (A): 0.7; PD (W): 0.15; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.45; VGS(th) Max.(V): 1.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 190m; RDSON1 Max.(Ω): 230m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.55; RDSON2 Typ.(Ω): 234m; RDSON2 Max.(Ω): 305m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 0.45; Ciss Typ.(pF): 43; Qg Typ.(nC): 2; AEC-Q101 Qualified: No