Reference Only
FMOSV003P3DN05E-H
Package: SOT-563; Type: Dual N MOS; ESD: Yes; BVDSS (V): 50; ID (A): 0.33; PD (W): 0.42; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.6; VGS(th) Max.(V): 1.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 1.6; RDSON1 Max.(Ω): 1.9; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 0.22; RDSON2 Typ.(Ω): 1.7; RDSON2 Max.(Ω): 2.2; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 0.19; Ciss Typ.(pF): 25; Qg Typ.(nC): 0.92; AEC-Q101 Qualified: No
Product Description
Package: SOT-563; Type: Dual N MOS; ESD: Yes; BVDSS (V): 50; ID (A): 0.33; PD (W): 0.42; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.6; VGS(th) Max.(V): 1.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 1.6; RDSON1 Max.(Ω): 1.9; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 0.22; RDSON2 Typ.(Ω): 1.7; RDSON2 Max.(Ω): 2.2; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 0.19; Ciss Typ.(pF): 25; Qg Typ.(nC): 0.92; AEC-Q101 Qualified: No