Reference Only
FMOSUD287N03-H
Package: LFPAK5060-4; Type: N MOS; BVDSS (V): 30; ID (A): 287; PD (W): 104; EAS (mJ): 205; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±10; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 0.77; RDSON1 Max.(Ω): 0.87; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 1.05; RDSON2 Max.(Ω): 1.35; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 6545; Qg Typ.(nC): 175.7; AEC-Q101 Qualified: No
Product Description
Package: LFPAK5060-4; Type: N MOS; BVDSS (V): 30; ID (A): 287; PD (W): 104; EAS (mJ): 205; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±10; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 0.77; RDSON1 Max.(Ω): 0.87; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 1.05; RDSON2 Max.(Ω): 1.35; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 6545; Qg Typ.(nC): 175.7; AEC-Q101 Qualified: No