Reference Only
FMOSUD200N08-H
Package: LFPAK5060-4; Type: N MOS; BVDSS (V): 80; ID (A): 200; PD (W): 188; EAS (mJ): 162; IDSS @VDSS(V): 64; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.3; VGS(th) Max.(V): 3.7; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.0m; RDSON1 Max.(Ω): 2.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 3.3m; RDSON2 Max.(Ω): 4.3m; RDSON2 @VGS(V): 6; RDSON2 @ID(A): 10; Ciss Typ.(pF): 5103; Qg Typ.(nC): 82; AEC-Q101 Qualified: No
Product Description
Package: LFPAK5060-4; Type: N MOS; BVDSS (V): 80; ID (A): 200; PD (W): 188; EAS (mJ): 162; IDSS @VDSS(V): 64; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.3; VGS(th) Max.(V): 3.7; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.0m; RDSON1 Max.(Ω): 2.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 3.3m; RDSON2 Max.(Ω): 4.3m; RDSON2 @VGS(V): 6; RDSON2 @ID(A): 10; Ciss Typ.(pF): 5103; Qg Typ.(nC): 82; AEC-Q101 Qualified: No