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FMOSUD177N10-H

FMOSUD177N10-H

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FMOSUD177N10-H

Package: LFPAK5060-4; Type: N MOS; BVDSS (V): 100; ID (A): 177; PD (W): 188; EAS (mJ): 289; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.2; VGS(th) Max.(V): 3.8; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.4m; RDSON1 Max.(Ω): 2.9m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 50; RDSON2 Typ.(Ω): 3.8m; RDSON2 Max.(Ω): 5m; RDSON2 @VGS(V): 6; RDSON2 @ID(A): 30; Ciss Typ.(pF): 5293; Qg Typ.(nC): 84

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: LFPAK5060-4; Type: N MOS; BVDSS (V): 100; ID (A): 177; PD (W): 188; EAS (mJ): 289; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.2; VGS(th) Max.(V): 3.8; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.4m; RDSON1 Max.(Ω): 2.9m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 50; RDSON2 Typ.(Ω): 3.8m; RDSON2 Max.(Ω): 5m; RDSON2 @VGS(V): 6; RDSON2 @ID(A): 30; Ciss Typ.(pF): 5293; Qg Typ.(nC): 84

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