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Home Formosa Microsemi

FMOSU30N10B-H

FMOSU30N10B-H

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FMOSU30N10B-H

Package: TO-252; Type: N MOS; BVDSS (V): 100; ID (A): 30; EAS (mJ): 64.8; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 22m; RDSON1 Max.(Ω): 26m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 8; RDSON2 Typ.(Ω): 24m; RDSON2 Max.(Ω): 32m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 4; Ciss Typ.(pF): 3307; Qg Typ.(nC): 57; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-252; Type: N MOS; BVDSS (V): 100; ID (A): 30; EAS (mJ): 64.8; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 22m; RDSON1 Max.(Ω): 26m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 8; RDSON2 Typ.(Ω): 24m; RDSON2 Max.(Ω): 32m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 4; Ciss Typ.(pF): 3307; Qg Typ.(nC): 57; AEC-Q101 Qualified: No

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