Reference Only
FMOSTHU15N10-H
Package: TO-252; Type: N MOS; BVDSS (V): 100; ID (A): 15; PD (W): 44; EAS (mJ): 12; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 86m; RDSON1 Max.(Ω): 108m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 96m; RDSON2 Max.(Ω): 125m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 847; Qg Typ.(nC): 20; AEC-Q101 Qualified: No
Product Description
Package: TO-252; Type: N MOS; BVDSS (V): 100; ID (A): 15; PD (W): 44; EAS (mJ): 12; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 86m; RDSON1 Max.(Ω): 108m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 96m; RDSON2 Max.(Ω): 125m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 847; Qg Typ.(nC): 20; AEC-Q101 Qualified: No