Reference Only
FMOSTHU14P6N10-H
Package: TO-252; Type: N MOS; BVDSS (V): 100; ID (A): 14.6; EAS (mJ): 10.1; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.9; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 100m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 1; RDSON2 Max.(Ω): 110m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 1009; Qg Typ.(nC): 16.3; AEC-Q101 Qualified: No
Product Description
Package: TO-252; Type: N MOS; BVDSS (V): 100; ID (A): 14.6; EAS (mJ): 10.1; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.9; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 100m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 1; RDSON2 Max.(Ω): 110m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 1009; Qg Typ.(nC): 16.3; AEC-Q101 Qualified: No