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FMOSTHAM12DN018E-H

$0.00

Type: Dual N MOS; ESD: Yes; BVDSS (V): 18; ID (A): 12; PD (W): 2; IDSS @VDSS(V): 16: IDSS Max.(uA): 1; IGSS VGS(V): ±4.5; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.2m; RDSON1 Max.(Ω): 7.2m; RDSON1 @VGS(V): 4.5: RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 8.2m; RDSON2 Max.(Ω): 10.5m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 1950; Qg Typ.(nC): 17; AEC-Q101 Qualified; No

SKU: FMOSTHAM12DN018E-H Categories: , Tag:

Description

Type: Dual N MOS; ESD: Yes; BVDSS (V): 18; ID (A): 12; PD (W): 2; IDSS @VDSS(V): 16: IDSS Max.(uA): 1; IGSS VGS(V): ±4.5; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.2m; RDSON1 Max.(Ω): 7.2m; RDSON1 @VGS(V): 4.5: RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 8.2m; RDSON2 Max.(Ω): 10.5m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 1950; Qg Typ.(nC): 17; AEC-Q101 Qualified; No

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