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Home Formosa Microsemi

FMOSTHAGD56DN02E-H

FMOSTHAGD56DN02E-H

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FMOSTHAGD56DN02E-H

Type: Dual N MOS; BVDSS (V): 20; ID (A): 56; PD (W): 31; IDSS @VDSS(V): 16: IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 1; VGS(th) @ID(mA): -0.25; RDSON1 Typ.(Ω): 4.3m; RDSON1 Max.(Ω): 5.8m; RDSON1 @VGS(V): 4.5: RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 7m; RDSON2 Max.(Ω): 12m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 3; Ciss Typ.(pF): 3165; Qg Typ.(nC): 38; AEC-Q101 Qualified; No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Type: Dual N MOS; BVDSS (V): 20; ID (A): 56; PD (W): 31; IDSS @VDSS(V): 16: IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 1; VGS(th) @ID(mA): -0.25; RDSON1 Typ.(Ω): 4.3m; RDSON1 Max.(Ω): 5.8m; RDSON1 @VGS(V): 4.5: RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 7m; RDSON2 Max.(Ω): 12m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 3; Ciss Typ.(pF): 3165; Qg Typ.(nC): 38; AEC-Q101 Qualified; No

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Formosa Microsemi
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