Reference Only
FMOSTHAC41N10-H
Package: T5060P8; Type: N MOS; BVDSS (V): 100; ID (A): 41; PD (W): 46; EAS (mJ): 5; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 12.5m; RDSON1 Max.(Ω): 15m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 12; RDSON2 Typ.(Ω): 19m; RDSON2 Max.(Ω): 25m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 8; Ciss Typ.(pF): 1055; Qg Typ.(nC): 12.9
Product Description
Package: T5060P8; Type: N MOS; BVDSS (V): 100; ID (A): 41; PD (W): 46; EAS (mJ): 5; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 12.5m; RDSON1 Max.(Ω): 15m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 12; RDSON2 Typ.(Ω): 19m; RDSON2 Max.(Ω): 25m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 8; Ciss Typ.(pF): 1055; Qg Typ.(nC): 12.9