Reference Only
FMOSTHAB40N03AE-H
Package: T3333P8; Type: N MOS; ESD: Yes; BVDSS (V): 30; ID (A): 40; PD (W): 27.8; EAS (mJ): 101; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.6m; RDSON1 Max.(Ω): 4.6m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 5.2m; RDSON2 Max.(Ω): 6.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 1949; Qg Typ.(nC): 17.6; AEC-Q101 Qualified: No
Product Description
Package: T3333P8; Type: N MOS; ESD: Yes; BVDSS (V): 30; ID (A): 40; PD (W): 27.8; EAS (mJ): 101; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.6m; RDSON1 Max.(Ω): 4.6m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 5.2m; RDSON2 Max.(Ω): 6.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 1949; Qg Typ.(nC): 17.6; AEC-Q101 Qualified: No