Reference Only
FMOSQB06DN02K-H
Package: TSSOP-8; Type: Dual N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 6.5; PD (W): 1.5; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 13m; RDSON1 Max.(Ω): 16m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 7.5; RDSON2 Typ.(Ω): 15; RDSON2 Max.(Ω): 18; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 7; Ciss Typ.(pF): 318; Qg Typ.(nC): 4.6; AEC-Q101 Qualified: No
Product Description
Package: TSSOP-8; Type: Dual N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 6.5; PD (W): 1.5; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 13m; RDSON1 Max.(Ω): 16m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 7.5; RDSON2 Typ.(Ω): 15; RDSON2 Max.(Ω): 18; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 7; Ciss Typ.(pF): 318; Qg Typ.(nC): 4.6; AEC-Q101 Qualified: No