Reference Only
FMOSQ08DN03-H
Package: SOP-08; Type: Dual N MOS; BVDSS (V): 30; ID (A): 8; PD (W): 1.3; EAS (mJ): 16; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.1; VGS(th) Max.(V): 2.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 10m; RDSON1 Max.(Ω): 12m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 10; RDSON2 Typ.(Ω): 12m; RDSON2 Max.(Ω): 16m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 5; Ciss Typ.(pF): 873; Qg Typ.(nC): 10.3; AEC-Q101 Qualified: No
Product Description
Package: SOP-08; Type: Dual N MOS; BVDSS (V): 30; ID (A): 8; PD (W): 1.3; EAS (mJ): 16; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.1; VGS(th) Max.(V): 2.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 10m; RDSON1 Max.(Ω): 12m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 10; RDSON2 Typ.(Ω): 12m; RDSON2 Max.(Ω): 16m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 5; Ciss Typ.(pF): 873; Qg Typ.(nC): 10.3; AEC-Q101 Qualified: No