Reference Only
FMOSQ07DP03-H
Package: SOP-08; Type: Dual P MOS; BVDSS (V): -30; ID (A): -7.3; PD (W): 1.5; EAS (mJ): 16; IDSS @VDSS(V): -24; IDSS Max.(uA): -1; IGSS VGS(V): ±25; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1; VGS(th) Max.(V): -2; VGS(th) @ID(mA): -0.25; RDSON1 Typ.(Ω): 15m; RDSON1 Max.(Ω): 18m; RDSON1 @VGS(V): -10; RDSON1 @ID(A): -10; RDSON2 Typ.(Ω): 18m; RDSON2 Max.(Ω): 23m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -5; Ciss Typ.(pF): 2157; Qg Typ.(nC): 23; AEC-Q101 Qualified: No
Product Description
Package: SOP-08; Type: Dual P MOS; BVDSS (V): -30; ID (A): -7.3; PD (W): 1.5; EAS (mJ): 16; IDSS @VDSS(V): -24; IDSS Max.(uA): -1; IGSS VGS(V): ±25; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1; VGS(th) Max.(V): -2; VGS(th) @ID(mA): -0.25; RDSON1 Typ.(Ω): 15m; RDSON1 Max.(Ω): 18m; RDSON1 @VGS(V): -10; RDSON1 @ID(A): -10; RDSON2 Typ.(Ω): 18m; RDSON2 Max.(Ω): 23m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -5; Ciss Typ.(pF): 2157; Qg Typ.(nC): 23; AEC-Q101 Qualified: No