Reference Only
FMOSQ06DN03-H
Package: SOP-08; Type: Dual N MOS; BVDSS (V): 30; ID (A): 6; PD (W): 1.1; EAS (mJ): 10; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 16m; RDSON1 Max.(Ω): 19m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 10; RDSON2 Typ.(Ω): 20m; RDSON2 Max.(Ω): 26m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 5; Qg Typ.(nC): 3.2; AEC-Q101 Qualified: No
Product Description
Package: SOP-08; Type: Dual N MOS; BVDSS (V): 30; ID (A): 6; PD (W): 1.1; EAS (mJ): 10; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 16m; RDSON1 Max.(Ω): 19m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 10; RDSON2 Typ.(Ω): 20m; RDSON2 Max.(Ω): 26m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 5; Qg Typ.(nC): 3.2; AEC-Q101 Qualified: No