Reference Only
FMOSP60N04B-H
Package: TO-220AB; Type: N MOS; BVDSS (V): 40; ID (A): 60; PD (W): 47; EAS (mJ): 81; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.1; VGS(th) Max.(V): 2.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 5.9m; RDSON1 Max.(Ω): 7.7m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 9.3m; RDSON2 Max.(Ω): 14m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 2400; Qg Typ.(nC): 37; AEC-Q101 Qualified: No
Product Description
Package: TO-220AB; Type: N MOS; BVDSS (V): 40; ID (A): 60; PD (W): 47; EAS (mJ): 81; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.1; VGS(th) Max.(V): 2.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 5.9m; RDSON1 Max.(Ω): 7.7m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 9.3m; RDSON2 Max.(Ω): 14m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 2400; Qg Typ.(nC): 37; AEC-Q101 Qualified: No