Reference Only
FMOSL8205B-H
Package: SOT-23-6; Type: Dual N MOS; BVDSS (V): 20; ID (A): 4.6; PD (W): 1.25; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 22m; RDSON1 Max.(Ω): 27m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 4.6; RDSON2 Typ.(Ω): 29m; RDSON2 Max.(Ω): 34m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3.5; Ciss Typ.(pF): 550; Qg Typ.(nC): 6.2; AEC-Q101 Qualified: No
Product Description
Package: SOT-23-6; Type: Dual N MOS; BVDSS (V): 20; ID (A): 4.6; PD (W): 1.25; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 22m; RDSON1 Max.(Ω): 27m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 4.6; RDSON2 Typ.(Ω): 29m; RDSON2 Max.(Ω): 34m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3.5; Ciss Typ.(pF): 550; Qg Typ.(nC): 6.2; AEC-Q101 Qualified: No