Reference Only
FMOSGTQ13P5N10-H
Package: SOP-08; Type: N MOS; BVDSS (V): 100; ID (A): 13.5; PD (W): 3.1; EAS (mJ): 33; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.6m; RDSON1 Max.(Ω): 8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 13.5; RDSON2 Typ.(Ω): 8.7m; RDSON2 Max.(Ω): 13.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 11.5; Ciss Typ.(pF): 3320; Qg Typ.(nC): 45; AEC-Q101 Qualified: No
Product Description
Package: SOP-08; Type: N MOS; BVDSS (V): 100; ID (A): 13.5; PD (W): 3.1; EAS (mJ): 33; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.6m; RDSON1 Max.(Ω): 8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 13.5; RDSON2 Typ.(Ω): 8.7m; RDSON2 Max.(Ω): 13.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 11.5; Ciss Typ.(pF): 3320; Qg Typ.(nC): 45; AEC-Q101 Qualified: No