Reference Only
FMOSGTP100N10-H
Package: TO-220AB; Type: N MOS; BVDSS (V): 100; ID (A): 100; PD (W): 156; EAS (mJ): 156; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±10; VGS(th) Min.(V): 1.3; VGS(th) Max.(V): 2.7; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.4m; RDSON1 Max.(Ω): 8.3m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 8.5m; RDSON2 Max.(Ω): 11m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 2410; Qg Typ.(nC): 45; AEC-Q101 Qualified: No
Product Description
Package: TO-220AB; Type: N MOS; BVDSS (V): 100; ID (A): 100; PD (W): 156; EAS (mJ): 156; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±10; VGS(th) Min.(V): 1.3; VGS(th) Max.(V): 2.7; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.4m; RDSON1 Max.(Ω): 8.3m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 8.5m; RDSON2 Max.(Ω): 11m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 2410; Qg Typ.(nC): 45; AEC-Q101 Qualified: No