Reference Only
FMOSGTAT42DN06-Q1-H
Package: T5060P8 Dual; Type: Dual N MOS; BVDSS (V): 60; ID (A): 42; PD (W): 38; EAS (mJ): 54; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 9.5m; RDSON1 Max.(Ω): 11.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 12.5m; RDSON2 Max.(Ω): 15.8m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 596; Qg Typ.(nC): 11.9; AEC-Q101 Qualified: Yes
Product Description
Package: T5060P8 Dual; Type: Dual N MOS; BVDSS (V): 60; ID (A): 42; PD (W): 38; EAS (mJ): 54; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 9.5m; RDSON1 Max.(Ω): 11.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 12.5m; RDSON2 Max.(Ω): 15.8m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 596; Qg Typ.(nC): 11.9; AEC-Q101 Qualified: Yes