Reference Only
FMOSGTAC82N10-H
Package: T5060P8; Type: N MOS; BVDSS (V): 100; ID (A): 82; PD (W): 83; EAS (mJ): 186; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 5.6m; RDSON1 Max.(Ω): 7m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 7.3m; RDSON2 Max.(Ω): 9m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 2377; Qg Typ.(nC): 23.8; AEC-Q101 Qualified: No
Product Description
Package: T5060P8; Type: N MOS; BVDSS (V): 100; ID (A): 82; PD (W): 83; EAS (mJ): 186; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 5.6m; RDSON1 Max.(Ω): 7m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 7.3m; RDSON2 Max.(Ω): 9m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 2377; Qg Typ.(nC): 23.8; AEC-Q101 Qualified: No