Reference Only
FMOSGTAC115N04-H
Package: T5060P8; Type: N MOS; BVDSS (V): 40; ID (A): 115; PD (W): 63; EAS (mJ): 144; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2m; RDSON1 Max.(Ω): 2.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 3m; RDSON2 Max.(Ω): 3.75m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 30; Ciss Typ.(pF): 1827; Qg Typ.(nC): 28.3; AEC-Q101 Qualified: No
Product Description
Package: T5060P8; Type: N MOS; BVDSS (V): 40; ID (A): 115; PD (W): 63; EAS (mJ): 144; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2m; RDSON1 Max.(Ω): 2.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 3m; RDSON2 Max.(Ω): 3.75m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 30; Ciss Typ.(pF): 1827; Qg Typ.(nC): 28.3; AEC-Q101 Qualified: No