FMOSG0P8N02E-H
N-Channel MOSFET, 25V, 80A, PDFN3333-8
PRODUCT DETAILS
Product Description
The FMOSG0P8N02E-H Power MOSFET from FORMOSA MICROSEMI is an N-Channel enhancement mode MOSFET optimized for power management applications. This device boasts a low on-resistance, minimizing power loss and improving overall efficiency. With a drain-source voltage of 25V and a continuous drain current of 80A, it's suitable for a wide range of applications, including DC-DC converters, load switching, and motor control. The FMOSG0P8N02E-H is housed in a space-saving PDFN3333-8 package, making it ideal for high-density designs. As an authorised distributor, Supreme Components International guarantees the authenticity and quality of this FORMOSA MICROSEMI product. Benefit from reliable performance and efficient power handling with this advanced MOSFET.
Product Tags
Technical Specifications
| Gate charge | 18 nanocoulombs |
|---|---|
| Package type | PDFN3333-8 |
| Mounting type | Surface Mount |
| Polarity type | N-Channel |
| Power dissipation | 35 Watts |
| Drain source voltage | 25 Volts |
| Continuous drain current | 80 Amperes |
| Drain source on resistance | 2.8 milliohms at GateSourceVoltage equals 10 Volts |
| Operating temperature range | Negative 55 Degrees Celsius to Positive 150 Degrees Celsius (Junction Temperature) |
Ordering Information
| Packaging Type | Tape And Reel |
|---|
Ships in:
1 day
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