Home Formosa Microsemi

FMOSG0P8N02E-H

Formosa Microsemi Logo
FMOSG0P8N02E-H
Manufacturer Formosa Microsemi
Short Description N-Channel MOSFET, 25V, 80A, PDFN3333-8
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
18 nanocoulombs
Packagetype
PDFN3333-8
Mountingtype
Surface Mount
Polaritytype
N-Channel
Powerdissipation
35 Watts
Drainsourcevoltage
25 Volts
Continuousdraincurrent
80 Amperes
Drainsourceonresistance
2.8 milliohms at GateSourceVoltage equals 10 Volts
Operatingtemperaturerange
Negative 55 Degrees Celsius to Positive 150 Degrees Celsius (Junction Temperature)

Ordering Information

Parameter
Value
Packaging Type
TAPE_AND_REEL

Full Description

The FMOSG0P8N02E-H Power MOSFET from FORMOSA MICROSEMI is an N-Channel enhancement mode MOSFET optimized for power management applications. This device boasts a low on-resistance, minimizing power loss and improving overall efficiency. With a drain-source voltage of 25V and a continuous drain current of 80A, it's suitable for a wide range of applications, including DC-DC converters, load switching, and motor control. The FMOSG0P8N02E-H is housed in a space-saving PDFN3333-8 package, making it ideal for high-density designs. As an authorised distributor, Supreme Components International guarantees the authenticity and quality of this FORMOSA MICROSEMI product. Benefit from reliable performance and efficient power handling with this advanced MOSFET.

This is a staging environment
×