Reference Only
FMOSF007DN02E-H
Package: SOT-363; Type: Dual N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 0.9; PD (W): 0.25; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 245m; RDSON1 Max.(Ω): 300m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.6; RDSON2 Typ.(Ω): 420m; RDSON2 Max.(Ω): 580m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.35; Ciss Typ.(pF): 40; Qg Typ.(nC): 0.54; AEC-Q101 Qualified: No
Product Description
Package: SOT-363; Type: Dual N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 0.9; PD (W): 0.25; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 245m; RDSON1 Max.(Ω): 300m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.6; RDSON2 Typ.(Ω): 420m; RDSON2 Max.(Ω): 580m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.35; Ciss Typ.(pF): 40; Qg Typ.(nC): 0.54; AEC-Q101 Qualified: No