Reference Only
FMOSBSS8402DW-H
Package: SOT-363; Type: Dual N+P MOS; ESD: Yes; BVDSS (V): 60/-50; ID (A): 0.115/-0.130; IDSS @VDSS(V): 60/-50; IDSS Max.(uA): ±1; IGSS VGS(V): ±20; IGSS Max.(uA): ±10; VGS(th) Min.(V): 1.0/-0.8; VGS(th) Max.(V): 2.5/-2.0; VGS(th) @ID(mA): 0.25/-1; RDSON1 Typ.(Ω): 3/-; RDSON1 Max.(Ω): 7.5/10; RDSON1 @VGS(V): 5/-5; RDSON1 @ID(A): 0.65/-0.1; Ciss Typ.(pF): 22/45(Max.); AEC-Q101 Qualified: No
Product Description
Package: SOT-363; Type: Dual N+P MOS; ESD: Yes; BVDSS (V): 60/-50; ID (A): 0.115/-0.130; IDSS @VDSS(V): 60/-50; IDSS Max.(uA): ±1; IGSS VGS(V): ±20; IGSS Max.(uA): ±10; VGS(th) Min.(V): 1.0/-0.8; VGS(th) Max.(V): 2.5/-2.0; VGS(th) @ID(mA): 0.25/-1; RDSON1 Typ.(Ω): 3/-; RDSON1 Max.(Ω): 7.5/10; RDSON1 @VGS(V): 5/-5; RDSON1 @ID(A): 0.65/-0.1; Ciss Typ.(pF): 22/45(Max.); AEC-Q101 Qualified: No