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Home Formosa Microsemi

FMOSBA350N10-Q1-H

FMOSBA350N10-Q1-H

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FMOSBA350N10-Q1-H

Package: TO-263-7; Type: N MOS; BVDSS (V): 100; ID (A): 350; PD (W): 500; EAS (mJ): 512; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.2; VGS(th) Max.(V): 3.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 1.6m; RDSON1 Max.(Ω): 2.0m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 9623; Qg Typ.(nC): 155; AEC-Q101 Qualified: Yes

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-263-7; Type: N MOS; BVDSS (V): 100; ID (A): 350; PD (W): 500; EAS (mJ): 512; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.2; VGS(th) Max.(V): 3.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 1.6m; RDSON1 Max.(Ω): 2.0m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 9623; Qg Typ.(nC): 155; AEC-Q101 Qualified: Yes

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