Reference Only
FMOSBA205N15-H
Package: TO-263-7; Type: N MOS; BVDSS (V): 150; ID (A): 205; PD (W): 417; EAS (mJ): 889; IDSS @VDSS(V): 120; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 4.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.8m; RDSON1 Max.(Ω): 4.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 6570; Qg Typ.(nC): 88; AEC-Q101 Qualified: No
Product Description
Package: TO-263-7; Type: N MOS; BVDSS (V): 150; ID (A): 205; PD (W): 417; EAS (mJ): 889; IDSS @VDSS(V): 120; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 4.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.8m; RDSON1 Max.(Ω): 4.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 6570; Qg Typ.(nC): 88; AEC-Q101 Qualified: No